Indium Antimonide (InSb) thin films were deposited onto well cleaned glass substrate at different substrate temperatures (323K, 373K and 473K) by vacuum evaporation technique using InSb compound as a source material. The characteristics of the films such as composition, microstructure and electrical properties were investigated in terms of substrate temperature. Xray diffraction studies confirmed the polycrystallinity of the films and the films show preferential orientation along the (111) plane. The particle size, dislocation density and strain were evaluated. The particle size increases with the increase of substrate temperature, which was found to be in the range 14.32 to 33.35 nm. Hall measurements indicate that the films were p-type, having carrier concentration W73; 1017cm-3 and Hall mobility (0.42 - 7.10) × 103 cm2/Vs for the film thickness of 300 nm. It is observed that the carrier concentration decreases and Hall mobility increases with the increase of substrate temperature. The sheet resistance is found to decrease with the increase of substrate temperature. The Hall mobility decreased with the increase of the film thickness and the maximum Hall mobility of 1.34 × 104 cm2/Vs was obtained for the films the thickness of 1000 nm and the substrate temperature of 473K.